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[이민형교수연구실] Managing local triplet excited states of boron-b ased TADF emitters for fast spin-flip process: Toward highly efficient TADF-OLEDs with low efficiency roll-off, Chemical Engineering Journal, 423, 130224 (2021)
작성자 최** 작성일 2021-11-03 조회수 547

 

Title

Managing local triplet excited states of boron-based TADF emitters for fast spin-flip process: Toward highly efficient TADF-OLEDs with low efficiency roll-off

Author list

Lee, Young Hoon; Shin, Youn-Seob, Lee, Taehwan; Jung, Jaehoon; Lee, Jeong-Hwan; Lee, Min Hyung

Publication date

2021/11

Citation information

Chemical Engineering Journal, 423, 130224 (2021)

 

DOI

10.1016/j.cej.2021.130224

Graphical Abstract

 

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Abstract

Improving the rate of a spin-flip process from a triplet to a singlet excited state, which is known as reverse intersystem crossing (RISC), is a challenging issue in realizing efficient and stable organic light-emitting diodes based on thermally activated delayed fluorescence (TADF-OLEDs). Herein, we report two donoracceptor-type TADF emitters (TMCzBCO and DMACBCO) employing a boron-carbonyl (BCO) hybrid acceptor unit. The emitters possess a 3n* state of the BCO unit as an intermediate local triplet excited state (3LE, T2), leading to the large spin-orbit coupling between the T2 and excited singlet (S1) states with significantly low activation barriers less than 10 meV. Thus, a fast RISC with rate constants (kRISC) exceeding 106 s-1, as well as short exciton lifetimes (1 s), are realized. Using the TADF emitters, high-performance TADF-OLEDs with maximum external quantum efficiencies of 24.7% for the green (TMCzBCO) and 28.4% for the yellow (DMACBCO) are presented. Remarkably, the devices sufficiently maintain high efficiency at high luminance, exceeding 20% at 5,000 cd m-2 and 18% at 10,000 cd m-2. These results indicate the crucial role of the 3n* state of BCO in the improvement of the RISC rate and shortening of the exciton lifetime, enhancing the optoelectrical performance of TADF-OLEDs.